| 摘要 |
PURPOSE: To increase the superconducting critical current flowing through a contact part without increasing the planar dimensions by employing a protruding or recessed structure at least partially on the contacting faces of two or more wirings or thin films of superconductor. CONSTITUTION: After depositing silicon dioxide 2 on a silicon substrate 1 by high frequency magnetron sputtering employing argon gas, niobium is deposited by 500nm by DC magnetron sputtering employing argon gas. It is then micromachined by reactive ion etching using CF4 gas thus forming a superconducting interconnection of Nb having line width of 1.5μm. The interconnection is subjected again to reactive ion etching by 250nm deep in the direction of thickness to form an irregular contact face 3 thus obtaining a lower layer superconducting interconnection 4 of Nb including the contact face 3. A protrusion in the center of contact face 3 has width of 0.5μm.
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