THIN FILM TRANSISTOR & METHOD OF MANUFACTURING THE SAME

摘要

A thin film transistor for LCD is provided to enhance an aperture ratio. The thin film transistor includes: a pixel electrode(6) formed on a glass substrate(1); a source and drain electrode(7) formed on the glass substrate(1) and the pixel electrode(6); an amorphous silicon layer(4) formed on the source and drain electrode; and a gate electrode(2) formed on a second gate insulator(3c) to dispose only on a first gate insulator(3). A spaced distance between the gate line(2) and the pixel electrode(6) of the thin film transistor is need only one side, thereby increasing the aperture ratio. An aluminum metal is used as the gate electrode, thereby decreasing the delay time of gate.