| 摘要 |
<p>PURPOSE: To reduce the cost of a large-area and high-integration scale LCD display by enhancing throughput and yield and to obtain the LCD display having high image quality by lowering address wiring resistance at the time of producing a TFT panel for the TFT driven active matrix type LCD display. CONSTITUTION: The TFT panel obtd. by forming all of gate electrode lines 2, drain electrode lines 6, gate electrodes and source/drain electrodes of metal Nb is provided. More particularly, this panel is applied to a large-area sheet type having a glass substrate size of >=300mm on one side and a thickness of <=1mm. The Nb films are so formed that the specific resistance of the metal Nb is <=25μΩcm and the stresses of the Nb film on the glass substrate is <=400MPa. The Nb films are formed by DC magnetron sputtering under a residual gaseous pressure of <=1×10<-6> Torr, introducing gaseous pressure of 2-5×10<-3> Torr, power density of >=5W/cm<2> and substrate temp. of >=90 deg.C.</p> |
