| 摘要 |
PURPOSE: To obtain a semiconductor light emitting element in which the emission efficiency is enhanced by suppressing the current flowing to the underside of an upper electrode through a simple fabrication process without increasing the number of steps of epitaxial growth thereby eliminating useless emission at a place from where the light can not taken out and taking out the emitted light efficientsy. CONSTITUTION: A semiconductor chip comprising an emission layer 6 and a current diffusion layer 5 provided on a semiconductor chip 1 is further provided with electrodes 8, 9, respectively, on the surface of the current diffusion layer 5 and on the rear of the semiconductor chip 1 thus constituting a semiconductor light emission element. The electrodes 8, 9 are not disposed oppositely but disposed obliquely each other. |
