| 摘要 |
PURPOSE: To form a highly reliable wiring even if a wiring width is at most 0.5μm by adopting a method such as formation of an Al wiring layer at a specified temperature by a sputtering method to fill up a groove-like opening formed on a dummy wiring layer. CONSTITUTION: A dummy wiring layer 14 is formed of the same material as a specified Al wiring layer on a base insulation film 12 and a first mask pattern 22 with a pattern which is a little wider than a wiring width of a specified wiring pattern is formed. The dummy wiring layer 14 is etched and a groove- like opening 24 is formed on the dummy wiring layer and a specified Al wiring layer 26 is formed all over a board by a sputtering method to fill up the opening 24 at 450 to 500 deg.C. After the dummy wiring layer 14 is exposed and the specified Al wiring layer 26 is etched to a specified film thickness, a second mask pattern 36 with a specified wiring pattern is formed and the dummy wiring layer 14 and the specified wiring layer 26 of excessive width are etched.
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