| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory device using a TFT having a simple structure by reducing the ruggedness of cells, and a method for manufacturing the memory device. SOLUTION: An SRAM containing a thin film transistor is provided with a first gate electrode 49 formed on the channel area of a substrate transistor and the channel area 53 of the thin film transistor formed on the side wall of the electrode 49 with a second gate insulating film 51 in between. Therefore, the succeeding wiring process of the formed SRAM can be performed easily, because the SRAM has a simpler structure than the prior art SRAM has and is less in ruggedness.</p> |
