| 摘要 |
PURPOSE: To stabilize a light-emitting region by concentrating a carrier to the upper side or the lower side of the inclined part of an active layer by a method wherein the angle formed by the interface between the region along a flat surface and the region along the inclined surface and an active layer is shifted from 90 degrees. CONSTITUTION: The title semiconductor laser device has the structure in which the boundary line of an inclined part and a flat part is almost vertical to the inclined part, and the direction of polarization is almost in parallel with the inclined part of the active layer. Also, on clad layers 22 and 28, they are formed in such a manner that the inclined part gradually moves to the lower flat part simultaneously with the growth of the above-mentioned layers. As a result, a light emitting region is stabilized, and a structure, with which unilateral near field pattern is obtained, can be formed. Besides, it is desirable that the thickness of the layer having the structure, in which the boundary line between the inclined part and the flat part is almost vertical to the inclined surface, is 1μm or smaller on the upper and the lower sides of the active layer.
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