| 摘要 |
PURPOSE: To deposit a flat film on an irregular board and make a board surface flat only by a deposition process by casting a lamp beam of a specified wavelength on a semiconductor board and forming a relatively thick film is recessed part when compared to a projecting part by a CVD method while raising a board temperature of a recessed part when compared with a projecting part. CONSTITUTION: A lamp beam of a specified wavelength is cast on a semiconductor board wherein a projecting part A and a recessed part B are formed and a relatively thick film 6 is formed in the recessed part B when compared with the projecting part A by a CVD method while raising a board temperature of the recessed part B when compared with the projecting part A. For example, a silicon oxide film 6 which becomes a layer insulation film is formed by vacuum chemical vapor growth method by lamp heating on an irregular semiconductor board with a step of 600nm by using silane gas and nitrogen suboxide gas as raw gas. In the process, a maximum strength wavelength of the lamp beam is set for 1.2μm and the recessed part B is heated so that its temperature is higher than that of the projecting part A, and the silicon oxide film 6 is deposited about 1000nm thick in the recessed part B and about 400nm thick in the projecting part A.
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