| 发明名称 |
Verfahren zur Herstellung einer EEPROM-Halbleiterstruktur |
| 摘要 |
The invention concerns a method of producing an EEPROM semiconductor structure with a resistor, a thin-film transistor, a capacitor and a transistor, the method using the individual implantation steps to produce different structures and hence being particularly easy to carry out.
|
| 申请公布号 |
DE19531629(C1) |
申请公布日期 |
1997.01.09 |
| 申请号 |
DE19951031629 |
申请日期 |
1995.08.28 |
| 申请人 |
SIEMENS AG, 80333 MUENCHEN, DE |
发明人 |
TEMPEL, GEORG, DR.RER.NAT. DR., 81927 MUENCHEN, DE |
| 分类号 |
H01L21/8247;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8247 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
