Nonvolatile memory

摘要

Nonvolatile memory with a simple structure where recorded information can be read without destruction: Voltage is impressed between control gate CG and memory gate MG at a writing operation. A ferroelectric layer 32 is polarized in accordance with the direction of the impressed voltage. The control gate voltage VCG to make a channel is low when the ferroelectric layer 32 is polarized with the control gate side being positive (polarized with second status). The control gate voltage VCG to make a channel is high when the ferroelectric layer 32 is polarized with the control gate side being negative (polarized with the first status). The reference voltage Vref is impressed to the control gate CG at the reading operation. A high drain current flows when the ferroelectric layer is polarized with the second status and low drain current flows when the ferroelectric layer is polarized with the first status. Recorded information can be read by detecting the drain current. With this reading operation, the polarization status is not destroyed.