| 摘要 |
In a method of forming a buried impurity layer at a deep position of a semiconductor substrate, the resist configuration is prevented from sagging. A resist film having a film thickness of at least 3 mu m is formed on a semiconductor substrate. The resist film is exposed selectively to form an image. After exposure and before developing, the resist film is baked at the temperature of 110 DEG -130 DEG C. The resist film is developed and rinsed to form a resist pattern. The generated resist pattern is baked at a temperature of 100 DEG C.-130 DEG C. Using the resist pattern as a mask, impurity ions are implanted at high energy to the main surface of the semiconductor substrate to form a buried impurity layer at a deep position of the semiconductor substrate. Then, the resist pattern is removed.
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