| 摘要 |
1,271,836. Transistor amplifying arrangements. H. LIST. 16 July, 1969 [30 July, 1968], No. 35806/69. Heading H3T. [Also in Division H1] A distributed amplifier utilizes a field-effect transistor with two gates, the electrodes of which are extended to form with a substrate R, C delay lines, the first gate G1, Fig. 5, and drain electrode D being constructed as strips of resistive material. The first gate G1 is driven at one end from signal source 2, the gate delay line being terminated by resistor 7, while the drain electrode line D is terminated at both ends in resistors 11, 12, delivering output at terminals 15. The second gate G2 is connected to a constant potential point. The Specification also discloses a construction (Fig. 6, not shown) of the embodiment shown diagrammatically in Fig. 7, which uses meander-lines, and comprises two such amplifiers with their sources coupled together by the source to drain impedance of a further field-effect transistor 26. |
