Dynamic memory

摘要

A dynamic memory includes a plurality of cells including capacitors connected by columns to bit lines and by rows to selection lines. An even row and an odd row contain reference cells, the cells of the other rows being memory cells. The capacitors of the reference cells have the same value as the capacitors of the memory cells. Means are also provided for, prior to reading a memory cell of an even row, connecting the selection line of the odd row of reference cells to an element having the same capacitance as a selection line, but which is precharged at the state opposite to the state of the selection line of the odd row of the reference cells.