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发明名称
COMPLEMENTARY TYPE MOS FIELD EFFECT TRANSISTOR
摘要
PURPOSE:To make the threshold voltages of P channel and N channel MOSFETs of specified values and reduce production processes by eliminating the superposition of gate electrodes, source regions and drain regions through gate insulation films.
申请公布号
JPS5348679(A)
申请公布日期
1978.05.02
申请号
JP19760123441
申请日期
1976.10.16
申请人
NIPPON ELECTRIC CO
发明人
OOTA MICHIHIRO
分类号
H01L27/092;H01L21/8238;H01L29/78
主分类号
H01L27/092
代理机构
代理人
主权项
地址
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