| 摘要 |
FIELD: electronic devices. SUBSTANCE: sources of first n-type MOSFET 3 and second p-type MOSFET 2 are connected to provide use of shared p-channel and n-channel MOSFET gates 5 and 6 for generation of boolean states of function F for both disjunction output 10 and prohibition output 12. In addition device has first p-channel MOSFET 1, second n-channel MOSFET 4, inverse input 7 for signal t, direct input 8 for signal t, positive voltage line 9 and negative voltage line 11. EFFECT: simplified design. 2 cl, 3 dwg |
