SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, PRODUCTION THEREOF, AND SEMICONDUCTOR WAFER

摘要

A semiconductor integrated circuit device having an SOI substrate comprises a p-channel MISFET Qp and an n-channel MISFET Qn formed on the main face of semiconductor layers (3a and 3b) formed over a semiconductor substrate (1) (n well 4) through an insulating layer (2). A hole (5) is bored in the insulating layer (2) below the channel region of each of the p-channel MISFET Qp and n-channel MISFET Qn. Each channel region and the semiconductor substrate (1) (n well 4) are electrically connected together through this hole (5).