| 摘要 |
PURPOSE: To obtain a semiconductor laser, which does not cause a mode loss in association with a mode conversion and is stable in a transverse mode, by a method wherein the width of a region of a high effective refractive index is changed along the direction of a resonator and the width is changed in a state that a primary differential in the direction of the resonator is continuous in the direction of the resonator and has no inflection point. CONSTITUTION: An N-type InGaP current constricting layer 9 is selectively grown by an MOVPE method. Then, a wafer is taken out from a growth furnace and an oxide film used as a selective growth mask is etched away. Then, a P-type GaAs contact layer 10 is formed by an MBE method or the like. After a P side electrode 11 and an N side electrode 12 are formed, a laser element having a resonator of a length of about 900μm is obtained by a cleavage method. Then, a low-reflective film, which has a thickness ofλ/4 (λ: oscillation wavelength) and consists of an Al2 O3 film, is formed on the front surface (the side of a Ws (L)) of the element and a high reflective film, which consists of an SiO2 film and an a-Si film and is formed into a four-layer film, is formed on the rear surface [the side of a Ws (O)] of the element. Then, the element is bonded on a heat sink facing its bonding surface downward.
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