Method of forming contacts in vias formed over interconnect layers

摘要

A method of fabricating a semiconductor device incorporating a via and an interconnect layer of aluminium or aluminium alloy. The invention provides a semiconductor device including a via and an interconnect layer of aluminium or aluminium alloy, a capping layer of electrically conductive material which has been formed over the interconnect layer and an electrically conductive contact which has been selectively deposited on the capping layer thereby to form a via, the materials of the capping layer and of the contact being selected whereby at the interface therebetween there is substantial absence of non-conductive compounds formed from the material of the capping layer.