发明名称 |
Method for programming an ETOX EPROM or flash memory when cells of the array are formed to store multiple bits of data |
摘要 |
Multiple logic levels can be simultaneously programmed into any combination of memory cells in a column of an ETOX array by applying one of a corresponding number of programming voltages to the word lines that correspond with the cells to be programmed. In the present invention, the memory cells in the array form a punchthrough current during programming which, in turn, leads to the formation of an increased number of substrate hot electrons. By utilizing the substrate hot electrons formed from the punchthrough current in addition to the channel hot electrons, much lower control gate voltages can be utilized during programming.
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申请公布号 |
US5587949(A) |
申请公布日期 |
1996.12.24 |
申请号 |
US19950429644 |
申请日期 |
1995.04.27 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
BERGEMONT, ALBERT;CHI, MIN-HWA |
分类号 |
G11C11/56;G11C16/10;(IPC1-7):G11C13/00 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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