| 摘要 |
<p>A single gas tight system (5) which performs multi-functions including reducing the thickness of oxides on contact pads (66) and probing, testing, burn-in, repairing, programming and binning of integrated circuits. A temperature control device (48) is used to heat the wafer (40) during an oxide reduction process or during burn-in of the wafer. During the oxide reduction process, hydrogen is introduced into the chamber (10), and the wafer (40) is heated so that oxides on contact pads can combine with hydrogen to form water vapor, thus reducing the thickness of the oxides. The computer (30) analyzes the test and/or burn-in data and provides control signals for repairing or programming the integrated circuits (64a-64l).</p> |
