发明名称 |
Semiconductor device with auto-aligned polycide gate |
摘要 |
An electronic semiconductor device (20) with a control electrode (19) consisting of self-aligned polycrystalline silicon (4) and silicide (12), of the type in which said control electrode (19) is formed above a portion (1) of semiconductor material which accommodates active areas (9) of the device (20) laterally with respect to the electrode, has the active areas (9) at least partially protected by an oxide layer (10) while the silicide layer (12) is obtained by means of direct reaction between a metal film deposited on the polycrystalline silicon (4) and on the oxide layer (10). <IMAGE> <IMAGE> |
申请公布号 |
EP0749158(A1) |
申请公布日期 |
1996.12.18 |
申请号 |
EP19950830249 |
申请日期 |
1995.06.16 |
申请人 |
CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO;STMICROELECTRONICS S.R.L. |
发明人 |
SANTANGELO, ANTONELLO;FERLA, GIUSEPPE |
分类号 |
H01L21/331;H01L29/49;H01L29/739;H01L29/78 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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