Thin-film vapor deposition apparatus

摘要

A thin-film vapor deposition apparatus has a reaction chamber for holding therein a substrate in an atmosphere isolated from an ambient atmosphere. For depositing a thin film on the substrate, the temperature of an inner wall of the reaction chamber is adjusted to control the temperature of the atmosphere in the reaction chamber, and the temperature of the substrate is also adjusted independently of the temperature of the atmosphere in the reaction chamber, while the substrate is being rotated at a high speed in the reaction chamber. Reactant gases required to deposit a thin film on the substrate are ejected from a reactant gas ejector head toward the substrate in the reaction chamber. Remaining and excessive gases are discharged out of the reaction chamber.