发明名称 |
METHOD AND SYSTEM FOR CONTROLLING GROWTH OF SILICONE CRYSTAL |
摘要 |
System and method for determining the diameter of a silicon crystal being pulled from a silicon melt for controlling a silicon crystal growing apparatus. The melt has a surface with a meniscus which is visible as a bright ring adjacent the crystal. A camera generates an image pattern of a portion of the bright ring adjacent the crystal. Image processing circuitry detects a characteristic of the image pattern and defines an edge of the bright ring as a function of the detected characteristic. The image processing circuitry further defines a generally circular shape including the defined edge of the bright ring. The diameter of the crystal is then determined based on the diameter of the defined shape for use in controlling the crystal growing apparatus. <IMAGE> |
申请公布号 |
JPH08333197(A) |
申请公布日期 |
1996.12.17 |
申请号 |
JP19960138195 |
申请日期 |
1996.05.31 |
申请人 |
M II M C ELECTRON MATERIALS INC |
发明人 |
ROBAATO EICHI FURUHOFU |
分类号 |
C30B15/26;C30B29/06;G01B11/10;H01L21/208;(IPC1-7):C30B29/06 |
主分类号 |
C30B15/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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