发明名称 |
Method for producing various semiconductor optical devices of differing optical characteristics |
摘要 |
An optical functional device includes a semiconductor substrate, an optical functional layer provided on said semiconductor substrate and selected from the group consisting of a light emitting layer, a light absorbing layer, and an optical waveguide layer. The optical functional layer has a multi-quantum well layer. Preferably, the semiconductor substrate is a nonplanar semiconductor substrate having a ridge and two grooves adjacent said ridge, said ridge having a ridge width of from 1 to 10 mu m, a ridge height of from 1 mu m to 5 mu m, and a gap distance of from 1 mu m to 10 mu m. Such an optical functional device can be fabricated by growing, on a nonplanar semiconductor substrate having a specified dimension of the ridge, a strained multi-quantum well layer by metalorganic vapor phase epitaxy. Integrated optical device or circuit preferably includes an optical functional device on the nonplanar semiconductor substrate of a specified range of ridge shape factors. An integrated optical device can be fabricated by combination of a plurality of optical functional devices having slightly different compositions and including a part of a strained multi-quantum well layer monolithically grown on a nonplanar semiconductor substrate.
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申请公布号 |
US5585957(A) |
申请公布日期 |
1996.12.17 |
申请号 |
US19940216610 |
申请日期 |
1994.03.23 |
申请人 |
NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
发明人 |
NAKAO, MASASHI;KONDOU, YASUHIRO;OKAYASU, MASANOBU;NAGANUMA, MITSURU;SUZUKI, YASUHIRO;YUDA, MASAHIRO;MITOMI, OSAMU;KASAYA, KAZUO;NAKANO, JUNICHI;YOKOYAMA, KIYOYUKI |
分类号 |
G02B6/12;G02B6/122;G02B6/13;G02B6/42;H01L31/0352;H01L31/18;H01L33/00;H01L33/06;H01S5/02;H01S5/026;H01S5/0625;H01S5/10;H01S5/12;H01S5/20;H01S5/227;H01S5/32;H01S5/34;H01S5/343;H01S5/40;H01S5/50;(IPC1-7):H01L27/14 |
主分类号 |
G02B6/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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