| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a pin photodiode integrated active pixel sensor, so that the sensor makes a superior response to blue light and has a modified dark current characteristic by a method, wherein proper processes are introduced in the manufacture of the sensor from the technique of a charge-coupled device(CCD) to integrate pin photodiodes in an active pixel architecture. SOLUTION: A pin photodiode integrated active pixel sensor is a device, which uses a mixed process technique and is provided with a pin photodiode(PPD) 12, and is the result of an integration of active pixel sensor(APS) architecture, which is manufactured typically in a complementary metal oxide semiconductor(CMOS). This new technique allows a mixing of the CMOS and a high-performance charge-coupled device(CCD) module. The PPD 12 becomes an optically operating device, which has an active device having the transferring function 4, a readout 16 through floating diffusion and a reset 18, in the arrangement of XY-addresable regions having each pixel. An n-type well CMOS tenology is coupled with the process of the CCD, for obtaining the best features from the both technologies of CMOS and CCD. Thereby, the defect of the response to the blue light of the sensor, the defect of the lag of the image of the sensor and the defect of a high dark current in the sensor are minimized.
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