| 摘要 |
1,204,437. Semi-conductor devices. SOC. GENERALE SEMICONDUTTORI S.p.A. 26 Sept. 1968, No. 45749/68. Heading H1K. In a process for manufacturing transistors a dopant is predeposited on a semi-conductor surface, the surface is electrolytically oxidized and then etched to remove the electrolytic oxide, thereby also removing the excess dopant from the surface, and the remaining dopant is diffused further into the semi-conductor body by a drive-in stage. In the preferred embodiment phosphorus is diffused into silicon from POCl 3 , the oxide layer formed during predeposition being etched away prior to electrolytic oxidation. Alternative dopant sources are BCl 3 , BBr 3 , As 2 O 3 , Sb 2 O 3 and P 2 O 5 . |
