Apparatus for preparing a functional deposited film by microwave plasma chemical vapor deposition

摘要

A microwave plasma chemical vapor deposition apparatus for forming a functional deposited film on a plurality of Substrates which includes a substantially enclosed film-forming chamber comprising an outer wall having an end portion thereof provided with a microwave introducing window to which a waveguide extending from a microwave power source is connected, The film-forming chamber has a cylindrical discharge space encircled by a plurality of rotatable cylindrical substrate holders. Each of the cylindrical substrate holders has a substrate thereon. The cylindrical substrate holders are concentrically arranged in the film-forming chamber. The film forming chamber is provided with means for evacuating the film-forming chamber and means for supplying a raw material gas into the discharge space. The means for supplying the raw material gas comprises one or more gas feed pipes provided with a plurality of gas liberation holes capable of supplying a raw material gas radiately against each of the substrates. The gas feed pipes are longitudinally installed substantially at the center position of the discharge space.