Integrated sensor for scanning probe microscope

摘要

A piezoresistive layer extends in the middle of a cantilever extending from a support section. The cantilever is made of n type silicon and is covered with a silicon oxide film. Electrodes are connected to the both ends of the piezoresistive layer. A p type silicon region is formed at the free end of the cantilever, and includes a sharply pointed portion to provide a probe. An electrode is connected to a p+ type silicon region formed in the p type silicon region, and an electrode is connected to an n+ type silicon region formed in a position more than 10 mu m apart from the p type silicon region. A rectangular through hole is formed in the cantilever between the piezoresistive layer and the probe.