Vertical trench gate MOS device and a method of fabricating the same

摘要

A low-voltage high-current discrete vertical insulated-gate field-effect transistor is made by a process using two silicon etch steps. The gate elctrode (122) is formed in a trench (118) and controls the current in the channel region along the trench sidewalls in an epi layer (101). The source diffusion (128') is provided by an unmasked implant which is screened only by various grown oxides.