发明名称 |
Semiconductor logic circuit using a first power source and a second power source |
摘要 |
A BiNMOS inverter and a BiCMOS inverter are utilized. The BiNMOS inverter uses first and second power sources. A potential of the second power source is greater than that of the first power source. The BiNMOS has a first bipolar transistor whose collector being connected to the first power source and whose emitter being connected to an output node, and a first P-type field effect transistor group having at least one P-type field effect transistor through which a drain-source current channel consists of the base of the first bipolar transistor and the second power source based on an input signal transmitted to at lease one input node.
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申请公布号 |
US5583455(A) |
申请公布日期 |
1996.12.10 |
申请号 |
US19940357517 |
申请日期 |
1994.12.16 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KOBAYASHI, TOMOHIRO;KATO, HATSUHIRO |
分类号 |
H03K19/08;H03K19/0944;(IPC1-7):H03K19/017 |
主分类号 |
H03K19/08 |
代理机构 |
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地址 |
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