发明名称 Semiconductor logic circuit using a first power source and a second power source
摘要 A BiNMOS inverter and a BiCMOS inverter are utilized. The BiNMOS inverter uses first and second power sources. A potential of the second power source is greater than that of the first power source. The BiNMOS has a first bipolar transistor whose collector being connected to the first power source and whose emitter being connected to an output node, and a first P-type field effect transistor group having at least one P-type field effect transistor through which a drain-source current channel consists of the base of the first bipolar transistor and the second power source based on an input signal transmitted to at lease one input node.
申请公布号 US5583455(A) 申请公布日期 1996.12.10
申请号 US19940357517 申请日期 1994.12.16
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KOBAYASHI, TOMOHIRO;KATO, HATSUHIRO
分类号 H03K19/08;H03K19/0944;(IPC1-7):H03K19/017 主分类号 H03K19/08
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