发明名称 Monolithic integrated sensor circuit in CMOS technology
摘要 The invention relates to a monolithic integrated sensor circuit, fabricated in CMOS technology, in which the circuit implemented on the semiconductor chip is connected to the ground connection via the substrate of the semiconductor chip, and in which the input signals are not referred to the potential of the ground connection.
申请公布号 US5583367(A) 申请公布日期 1996.12.10
申请号 US19950374387 申请日期 1995.01.17
申请人 DEUTSCHE ITT INDUSTRIES GMBH 发明人 BLOSSFELD, LOTHAR
分类号 G01R33/07;H01L27/092;H01L27/22;H01L43/06;(IPC1-7):H01L29/82;H01L43/00 主分类号 G01R33/07
代理机构 代理人
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