| 摘要 |
PURPOSE: To obtain a pressure contact-type semiconductor device which reduces a thermal stress, which obtains high reliability and which obtains an excellent electric characteristic by a method wherein thermal buffer electrode plates whose surface roughness is substantially at a specific value or lower are formed between electrodes formed on both main faces of a semiconductor element substrate and one pair of external electrodes. CONSTITUTION: A pressure contact-type semiconductor device is provided with a semiconductor element substrate 1 which comprises at least one P-N junction and with electrodes 2, 6 formed respectively on both main faces of the semiconductor element substrate 1. In addition, the pressure contact-type semiconductor device is provided with thermal buffer electrode plates 3, 7 which are connected to the electrodes 2, 6 and whose surface roughness Ra is substantially at 0.15 or lower and with one pair of external electrodes 4, 8 which bring both main faces of the semiconductor element substrate 1 into pressure contact via the thermal buffer electrode plates 3, 7. For example, thermal buffer electrode plates 3, 7 which are constituted respectively of molybdenum are bonded, via porous bonding layers 5, 9 which are constituted of gold, a gold alloy, silver or a silver alloy, to the outside of a cathode electrode 2, an anode electrode 6 and a gate electrode 10 which are constituted of aluminum. |
