| 摘要 |
PURPOSE: To prevent a slope oscillation type semiconductor laser from increasing in threshold current by a method wherein a current is less spread in an optical guide layer. CONSTITUTION: A stepped substrate 1 is provided with a main surface which deviates off from a (111) A plane by an angle ofθfrom a (100) plane and also a slope which deviates off from the a (111) A plane by an angle ofθ1 (θ1 >θ), and an active layer 3 so formed nearly along the slope and a first P-type clad layer 4 which is laminated coming into contact with the active layer 3, high in carrier concentration in its region along the slope, and low in carrier concentration in its region along the main surface are provided onto the stepped substrate 1, wherein a P-type optical guide layer 5 is provided inside the first P-type clad layer 4. Furthermore, a second clad layer 7 whose region lying on the slope is a P-type region and another region lying on the main surface is a current block layer 6 is provided onto the first P-type clad layer 4.
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