| 摘要 |
PURPOSE: To form ideal potential barriers on both sides of the first crystal by growing the first crystal having the small forbidden band gap directly on the step of the surface of a solid-state sample, and growing other crystals with out bonding on both sides of the above described crystal. CONSTITUTION: A step 2 having the height of an atom layer is present on a (111) surface 1 of Si, which is to become a substrate. When Ge is evaporated on the surface with the substrate temperature being kept at 250-350 deg.C, the Ge forms a crystal structure 3 directly on the step 2. When Si is supplied on the surface with the substrate temperature being kept at 350-800 deg.C at the next time, the Si forms the crystal structure toward the terrace at the lower side from the part right beneath the step 2 toward the terrace. When the Ge is supplied on the surface with the substrate temperature being kept at 250-350 deg.C furthermore, the Ge forms a crystal structure 5 directly on the step edge of the terrace 4. |
