Semiconductor component with stepped region on substrate

摘要

The component includes a semiconductor substrate upon which is formed a stepped region (3a). A polycrystalline silicon layer (6) section is deposited on the stepped region and a metal silicide layer (7) of a high melting point is formed on the polycrystalline silicon layer. The metal silicide layer is covered by a top layer (8), selected from a group contg. an amorphous silicon layer, a polycrystalline silicon layer, a TiN layer, and a TiW layer. Pref. the silicon layer, the metal silicide layer, and the top layer form a gate electrode layer with a three-layer structure.