Integrating hyperacuity sensors and arrays thereof

摘要

Sensor elements which are capable of sensing illumination edges with subpixel accuracy are described. The sensor elements include a plurality of conductive storage nodes and a plurality of collection electrodes which are in a low resistance, touching relationship with a first semiconductive material layer. A second semiconductive material layer is placed over the first such that the first and second semiconductive material layers and the storage nodes form light sensors. Near the first semiconductive layer is a gate electrode. When a first voltage is applied to the gate electrode the resistance of the first semiconductive material layer between the storage nodes and the conductive collection electrodes is high. Illumination which strikes the sensor element creates electron hole pairs which induce charges on the storage nodes. When a second voltage is applied to the gate electrode the resistance of the first semiconductive material layer between the storage nodes and the conductive collection electrodes becomes low. Charges which have accumulated onto the storage nodes can then easily flow to the conductive collection electrodes.