发明名称 |
Vertical power MOSFET and process of fabricating the same |
摘要 |
A channel region and a source region are formed on a surface of a substrate by double diffusion. A trench is formed so as to penetrate a part of the channel region and a part of the source region and reach the substrate. After an insulating film is formed on an inner wall of the trench, a polysilicon layer is buried up to an intermediate portion of the trench. In this state, channel ions are implanted in a side surface region of the trench, thereby depleting a channel region. Thereafter, a polysilicon layer for leading out a gate is buried in the trench.
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申请公布号 |
US5578508(A) |
申请公布日期 |
1996.11.26 |
申请号 |
US19950426233 |
申请日期 |
1995.04.21 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
BABA, YOSHIRO;YANAGIYA, SATOSHI;MATSUDA, NOBORU;OSAWA, AKIHIKO;TSUCHITANI, MASANOBU |
分类号 |
H01L21/302;H01L21/265;H01L21/266;H01L21/306;H01L21/336;H01L29/78;(IPC1-7):H01L21/265;H01L21/304;H01L21/76 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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