PLASMA CHEMICAL ETCHING EQUIPMENT AND METHOD USING LASER

摘要

PROBLEM TO BE SOLVED: To obtain an extremely thin and uniform semiconductor substrate with high final surface quality. SOLUTION: A differential heating processing is executed to the part of a semiconductor substrate 40 during downstream etching by using a scannable laser and control unit 58. Different etching speeds can be obtained at each heating part by the differential heating so that uniformity can be improved, and the damage of a surface generated due to etching can be reduced. This system is provided with an etching chamber 50 capable of containing a downstream plasma for directly setting a visual line between the substrate 40 and the scannable laser unit 58. In this system, dynamic process update can be attained by measuring the etching speed and temperature as necessary.