| 摘要 |
PROBLEM TO BE SOLVED: To reduce contact resistance of a bit line by including a lower part conductive layer where impurity is doped, an inter-layered insulating film having a contact hole provided over it, a bit line communicated to the lower part conductive layer through the contact hole, and an oxide layer obtained by oxidizing the bit line. SOLUTION: On a semiconductor substrate 41, a transistor is provided with a first insulating film 45 and a gate electrode 47, a second insulating film 49, a source and a drain 51, and a spacer 53 is formed. Further, an interlayer insulating film 57 for insulating a riding pad 55 is formed, and a bit line, connected to the gate electrode 47, etc., through contact holes 59 and 59' is also formed. In addition, an oxide 65 is formed on the surface of bit line to prevent the movement of impurities, so that the impurities are not allowed to leak to a tungsten silicide, which forms the bit line for preventing the generation of bubbles. |
