| 摘要 |
An integrated memory device can be used as a Content Addressable Memory (CAM) or as a Random Addressable Memory (RAM) for applications in data compression, video compression or Autosophy robots. Memory addressing employs long chains of Field Effect Transistors, forming a logical AND function, and programmable non volatile connection cells which can be implemented either as programmable fuses or memory transistors including PROM, EPROM, EEPROM or FLUSH technologies. Each connection cell is programmable for either connection or non connection. Each chain of Field Effect Transistors may generate any arbitrary output address code which is programmed via diodes and the same non volatile connection cells used to decode the input data words. The device combines extreme low power consumption with very fast search access speed. Devices implemented as flexible thin foils can be folded into very large, compact and robust memory arrays.
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