PHOTORESIST PATTERN FORMING METHOD

摘要

The method is designed to form a positive photoresist pattern of good quality to increase the selectivity of a resist. The method comprises the steps of : forming a photoresist layer(2) by depositing a photoresist material(AZ5214) on a substrate(11); exposing the photoresist layer(2); developing to remove the photoresist layer(2); soaking in alkali solution for the inside of the developed photoresist pattern to cause cross-linking; and hard-baking of the photoresist pattern(2).