VIA PLUG FORMING METHOD OF SEMICONDUCTOR DEVICE

摘要

forming a first junction layer(11) on a silicone substrate or on a contact substrate(10) of a metal layer; forming a second junction layer(13) on an oxide film(12) after depositing the oxide film(12) on the first junction layer(11); forming a via hole(14) by etching the second junction layer(13) and the oxide film(12) to expose the first junction layer(11); depositing a tungsten(15) for a via plug on the upper part of the via hole(14) and the second junction layer(13); and forming a via plug(16) inside the via hole(14) by blanket etch back of the tungsten(15).