| 摘要 |
forming a contact hole(2) by depositing and etching a BPSG(1) for flattening after forming the circuit elements such as a transistor and a capacitor on a semiconductor substrate; depositing a Ti(3), a first TiN(4) and a tungsten(W)(5) on the entire surface; forming a tungsten plug(5') on the contact hole(2) by etch back of the tungsten(5); remaining an aluminum(6) and a second TiN(7) on the region of a metal wiring by etching after depositing the aluminum(6) and the TiN(7) on the entire surface and defining the metal wiring area by photolithography; and forming a second tungsten(9), and forming a tungsten side wall(9') on the side wall of the aluminum(6) by etch back of the second tungsten(9), the second TiN(7), the Ti(3) and the first TiN(4) simultaneously.
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