Monolithical semiconductors infrared emitter optically pumped by a solid state Q-switched microlaser

摘要

A novel IR emitter has an IR emitting semiconductor element (12) optically pumped by a Q-switched micro-laser (2,4,6,8). Pref. the semiconductor element is based on PbxSn1-xSe, PbxSn1-xTe, PbS1-xSex, InAsxSb1-x, CdxHg1-xTe, CdxPb1-xS, Bi1-xSbx, InxGa1-xAs, InAsxP1-x, CdxZn1-xS, (AlxGa1-x)yIn1-yAs or (AlxGa1-x)yIn1-yP. The micro-laser may be passively Q-switched and may comprise a saturable absorbent (8) as a thin film which is directly deposited on a solid active medium (6) and which pref. comprises an organic dye (pref. bis(4-di(m)ethylaminodithiobenzyl)nickel) in soln. in a polymeric solvent (pref. PMMA, PVA, PVAc or polystyrene). Also claimed is an optical parametric oscillator with the above emitter.