发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device characterized by the fact that the disturb test time of the semiconductor memory device can be shortened, and the power consumption can be cut. In the disturb test for the semiconductor memory device in this invention, multiple word lines are selected at the same time with a prescribed interval corresponding to the element isolation layout. As the word lines are selected corresponding to the element isolating layout, the interference caused by the element isolation state can be excluded. Since multiple word lines are selected at the same time, the time of operation can be shortened. Since the word lines are maintained in the selected state while the sense amplifiers are not reset, there is no increase in the power consumption although multiple word lines are selected at the same time. |
申请公布号 |
US5574693(A) |
申请公布日期 |
1996.11.12 |
申请号 |
US19950473405 |
申请日期 |
1995.06.07 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
INUI, TAKASHI;OKUZAWA, KIYOTAKA;OGATA, YOSHIHIRO |
分类号 |
B60R9/042;(IPC1-7):G11C13/00 |
主分类号 |
B60R9/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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