ETCHING MATERIAL AND ETCHING METHOD

摘要

PURPOSE: To obtain an etching material comprising an aqueous solution containing hydrofluoric acid and ammonium fluoride in a specific ratio, capable of etching in good repeatability without using a pollutive material, chromic acid, without generating crystalline deposits on a substrate, and useful for semiconductor devices, etc. CONSTITUTION: An etching material comprises an aqueous solution containing at least hydrofluoric acid and ammonium fluoride in a weight ratio of (0.49-2.0):(0.19-2.0). The etching material is preferably used for etching an aluminum oxide layer formed on the surface of a material consisting mainly of aluminum.