| 发明名称 |
Heterostructure field effect device having refractory ohmic contact directly on channel layer and method of making |
| 摘要 |
<p>A complementary III-V heterostructure field effect device includes the same refractory ohmic material for providing the contacts (117, 119), to both the N-type and P-type devices. Furthermore, the refractory ohmic contacts (117, 119) directly contact the InGaAs channel layer (16) to provide improved ohmic contact, despite the fact that the structure incorporates an advantageous high aluminum composition barrier layer (18) and an advantageous GaAs cap layer (20). <IMAGE></p> |
| 申请公布号 |
EP0741417(A2) |
申请公布日期 |
1996.11.06 |
| 申请号 |
EP19960106751 |
申请日期 |
1996.04.29 |
| 申请人 |
MOTOROLA, INC. |
发明人 |
ABROKWAH, JONATHAN K.;HUANG, JENN-HWA;OOMS, WILLIAM J.;SHURBOFF, CARL L.;HALLMARK, JERALD A. |
| 分类号 |
H01L29/43;H01L21/28;H01L21/285;H01L21/3205;H01L21/335;H01L21/338;H01L23/52;H01L27/085;H01L29/08;H01L29/417;H01L29/45;H01L29/778;H01L29/812;(IPC1-7):H01L29/778 |
主分类号 |
H01L29/43 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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