Method for forming a fluorinated nitrogen containing dielectric

摘要

This disclosure reveals a manufacturable and controllable method to fabricate a dielectric which increases the device current drive. A nitrogen-containing ambient is used to oxidize a surface of a substrate (10) to form a nitrogen-containing dielectric (12). Then a fluorine-containing specie (F) is introduced, preferably through implanting, into a gate electrode (20) overlying the nitrogen-containing dielectric. The fluorine is then driven into the underlying nitrogen-containing dielectric. A fluorinated nitrogen-containing region (14') is expected to form at the interface between dielectric (12') and substrate (10). The interaction between fluorine and nitrogen increases the peak transconductance as well as the transconductance at a high electric field for the dielectric. Therefore, the overall current drive is increased by this approach.