| 摘要 |
The electrode structure of the invention includes an n-type AlxGayIn1-x-yN (0</=x</=1, 0</=y</=1, x+y</=1) semiconductor layer and an electrode layer formed on the semiconductor layer. In the electrode structure, the electrode layer is made of a metal silicide and, when a metal contained in the metal silicide is nitrified, a free energy of the metal nitride becomes smaller than a free energy of the metal contained in the metal silicide.
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