| 摘要 |
PURPOSE: To obtain a smooth light reflection face for oscillating a laser in a nitride semiconductor. CONSTITUTION: An AlGaN layer 12, a GaN layer 14 and an AlGaN layer 16 are grown epitaxially on the (0, 0, 0, 1) face of a 6H-SiC substrate 10. Electrodes 18 and 20 are then deposited, respectively, on the underside of the substrate 10 and on the uppermost layer 16. Subsequently, the substrate 10 is made thinner than 100μm, preferably thinner than 60μm, and a knife is set in the direction parallel with the (1, -1, 0, 0) face in order to cleave the substrate on the (1, -1, 0, 0) plane. More specifically, two reflection faces are formed by cleavage and two other sides are cut by means of a scriber. Notation of crystal face is modified slightly as compared with normal notation such that the (100) face is notified as (1, 0, 0) and an equivalent face, located in the minus direction of x-axis, is notified as (-1, 0, 0).
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